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| inchange semiconductor product specification silicon pnp power transistors BDX66 description ? with to-3 package ? high current ? darlington applications ? designed for power amplification and switching applications. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -16 a i cm collector current(peak) -20 a i b base current -0.25 a p t total power dissipation t c =25 ?? 150 w t j junction temperature -55~200 ?? t stg storage temperature -55~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.17 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors BDX66 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a ; i b =0;l=25mh -60 v v cesat collector-emitter saturation voltage i c =-10a ;i b =-40ma -2 v i cbo collector cut-off current v cb =-40v; i e =0 t c =150 ?? -1 -5 ma i ceo collector cut-off current v ce =-30v; i b =0 -3 ma i ebo emitter cut-off current v eb =-5v; i c =0 -5 ma switching times t on turn-on time 1.0 | s t off turn-off time i c =-10a ; i b1 =-i b2 =0.04a v cc =12v ; 3.5 | s inchange semiconductor product specification 3 silicon pnp power transistors BDX66 package outline fig.2 outline dimensions |
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